Journal
APPLIED PHYSICS LETTERS
Volume 82, Issue 17, Pages 2916-2918Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1571227
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We demonstrate that carrier scattering induced by the thickness fluctuation of a silicon-on-insulator (SOI) film reduces electron mobility in ultrathin-body metal-oxide-semiconductor field-effect transistors with SOI thickness, T-SOI, of less than 4 nm at room temperature and is the dominant scattering mechanism at low temperatures. The thickness fluctuation of a nanoscaled SOI film induces large potential variations due to the difference of quantum-confinement effects from one part to another, and thus carrier scattering potentials are formed in the channel. It is shown that experimental electron mobility follows the theoretical T-SOI dependence and the expected temperature dependence of the scattering induced by SOI thickness fluctuation. (C) 2003 American Institute of Physics.
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