GaAs-based near-infrared omnidirectional reflector

We introduce a compound-semiconductor-based omnidirectional reflector. A four-layer-pair stack of GaAs/AlAs was grown epitaxially using molecular-beam epitaxy, and was then converted to a GaAs/Al2O3 multilayer stack by selective oxidation of the AlAs layers. The resultant one-dimensional photonic crystal exhibited omnidirectional reflection properties in near-IR wavelength range below 1 mum. Reflectance spectra measured at various incidence angles and polarizations were observed to be in good agreement with theoretically simulated results. (C) 2003 American Institute of Physics.