Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 653, Issue -, Pages 534-538Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2015.09.076
Keywords
Transparent memory; Oxygen-doped indium thin oxide; Unipolar switching
Ask authors/readers for more resources
Recently, transparent memory would be useful in invisible electronics. In this work, for the first time we present a feasibility of stable unipolar resistive switching (RS) characteristics with reset current of submicron ampere for the fully transparent ITO/oxygen-doped ITO/ITO memory capacitors, i.e., all ITO structures, produced by sputtering method, which shows a high optical transmittance of approximately 80% in the visible region as well as near ultra-violet region. In addition, in a RS test to evaluate a reliability for the proposed memory devices, we observed a stable endurance of > 100 cycles and a retention time of > 10(4) s at 85 degrees C, with a current ratio of similar to 10(2) to similar to 10(3). This result indicates that this transparent memory by engineering the amount of oxygen ions within the ITO films could be a milestone for future see-through electronic devices. (C) 2015 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available