Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume 42, Issue 5A, Pages L445-L447Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.L445
Keywords
AlN; SiC; MBE; surface control; RHEED intensity oscillation; in-plane misorientation
Categories
Ask authors/readers for more resources
The initial layer-by-layer growth of AIN was realized on a surface-controlled 4H-SiC(0001) substrate using plasma-assisted molecular-beam epitaxy (PA-MBE). To achieve initial two-dimensional (213) growth, the control of SiC surface chemistry is very important as well as that of surface flatness. The effect of SiC preparation on the surface structure and chemical composition was investigated by using reflection high-energy electron diffraction (RHEED) and in situ X-ray photoelectron spectroscopy (XPS). The initial growth mode of AIN was strongly influenced by the removal of residual oxygen atoms from the SiC surface. Symmetrical and asymmetrical X-ray rocking curve (XRC) measurements revealed that initial 2D growth was essential to obtain the excellent crystalline quality of AIN layer.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available