4.6 Article Proceedings Paper

Flexible dv/dt and di/dt control method for insulated gate power switches

Journal

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
Volume 39, Issue 3, Pages 657-664

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIA.2003.810654

Keywords

driver circuits; electromagnetic interference (EMI); insulated gate bipolar transistors (IGBTs); insulated gate transistor switches; power MOSFETs; power FETs

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Active gate control techniques are introduced in this paper for flexibly and independently controlling the dv/dt and di/dt of insulated gate power devices during hard-switching events. In the case of dv/dt control, the output voltage dv/dt can be controlled over a wide range by electronically adjusting the effective gate-to-drain (-collector) capacitance (i.e., Miller capacitance). For di/dt control, similar techniques are applied for electronically adjusting the output current di/dt over a wide range using voltage feedback from a small inductor connected in series with the switch's source (emitter) terminal. Both techniques are designed to maximize their compatibility with power module implementations that combine the power switch and its gate drive, including integrated circuit gate drives. Simulation and experimental results are included to verify the desirable performance characteristics of the presented dv/dt and di/dt control techniques.

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