Journal
APPLIED PHYSICS LETTERS
Volume 82, Issue 18, Pages 3026-3028Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1571651
Keywords
-
Categories
Ask authors/readers for more resources
We investigated intentionally hydrogenated zinc oxide (ZnO:H) fabricated by combining photoassisted metalorganic chemical vapor deposition and mercury-sensitized hydrogen addition methods. We found that intentionally incorporated hydrogen plays an important role in n-type conduction as a donor, improving free carrier concentration and electrical stability. We simultaneously obtained improved surface roughness of the ZnO:H film due to an enhancement of (11 (2) over bar0) orientation. The high-quality ZnO:H film is promising as a back reflector material for thin-film solar cells. (C) 2003 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available