Journal
SURFACE SCIENCE
Volume 531, Issue 1, Pages 68-76Publisher
ELSEVIER
DOI: 10.1016/S0039-6028(03)00398-4
Keywords
scanning tunneling microscopy; scanning tunneling spectroscopies; desorption induced by electron stimulation; silicon; semiconducting surfaces; chlorine; surface electronic phenomena (work function, surface potential, surface states, etc.)
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Injection of tunneling electrons and holes from the probe tips of a scanning tunneling microscope was found to enhance the hopping motion of Cl atoms between neighboring dangling-bond sites of Si dimers on Si(1 0 0)-(2 x 1) surfaces, featured by the rate of hopping linearly dependent on the injection current. The hopping rate formed peaks at sample biases of V-S similar to +1.25 and -0.85V, which agree with the peaks in the local density of states spectrum measured by scanning tunneling spectroscopy. The Cl hopping was enhanced at Cl-adsorbed sites even remote from the injection point. The Cl hopping by hole injection was more efficiently enhanced by sweeping the tip along the Si dimer row than by tip-sweeping along the perpendicular direction. Such anisotropy, on the other hand, was insignificant in the electron injection case. All of these findings can be interpreted by the model that the holes injected primarily into a surface band originated from the dangling bonds of Si dimers propagate quite anisotropically along the surface, and become localized at Cl sites somehow to destabilize the Si-Cl bonds causing hopping of the Cl atoms. The electrons injected into a bulk band propagate in an isotropic manner and then get resonantly trapped at Si-Cl antibonding orbitals, resulting in bond destabilization and hopping of the Cl atoms. (C) 2003 Elsevier Science B.V. All rights reserved.
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