Journal
APPLIED PHYSICS LETTERS
Volume 82, Issue 19, Pages 3342-3344Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1574400
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Organic light-emitting diodes were fabricated on a 125-mum-thick polyethylene terephthalate substrate covered with 100 nm indium tin oxide. The luminance-current-voltage performance and the emission spectrum of the devices are investigated in the bent state under mechanical stress at different bending radii. Down to a curvature of 15 mm, no significant decrease in the device performance is found compared to the relaxed state, as well as to conventional devices on glass substrates. (C) 2003 American Institute of Physics.
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