Spin-memory loss and current-perpendicular-to-plane-magnetoresistance in sputtered multilayers with Au

We derive a spin-diffusion length at 4.2 K in sputtered Au, l(sf)(Au)=35(-5)(+65) nm, spin-memory-loss at Au/Cu interfaces, delta(Au/Cu)=0.13(-0.02)(+0.08), and Au/Cu interface specific resistance, 2AR(Au/Cu)=0.35(-0.05)(+0.10) fOmega m(2). We also show that exchange biased spin valves with Au sandwiched between Co layers produce changes in specific resistance, ADeltaR, comparable to those for Cu and Ag. (C) 2003 American Institute of Physics.