Journal
PHYSICAL REVIEW B
Volume 67, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.67.201304
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The problem of electron tunneling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The k(3) Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunneling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.
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