Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P

For highly disordered n-type Al0.19Ga0.33In0.48P grown lattice matched to an undoped GaAs substrate, using far-infrared-magneto-optic generalized ellipsometry, the room-temperature free-charge-carrier parameters effective mass m*=0.12(0.01) m(0), concentration N=6.7(0.2)x10(17) cm(-3), and mobility mu=339(15) cm(2)/(V s) are determined by modeling the observed magneto-optic birefringence originating from the far-infrared free-charge-carrier excitations in the Al0.19Ga0.33In0.48P layer without additional electrical measurements. (C) 2003 American Institute of Physics.