A completely flexible organic transistor obtained by a one-mask photolithographic process

A one-mask optolithographic process is proposed for obtaining a completely flexible organic thin-film transistor structure. The proposed device consists in a bottom structure assembled on a flexible and transparent insulating layer, without any substrate, with source and drain contacts on one side and the gate on the opposite side. The main advantage consists in avoiding the presence of a substrate as the insulator itself is able to support the whole structure. Furthermore, being optically transparent, the insulator is suitable to be employed for the photolithographic realization of the contacts with a one-mask process with no need of mask alignment between source-drain contacts and gate. (C) 2003 American Institute of Physics.