Journal
APPLIED PHYSICS LETTERS
Volume 82, Issue 21, Pages 3776-3778Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1578537
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We report the fabrication of silicon nanostructures using aromatic hydroxybiphenyl self-assembled monolayers as ultrathin (1.1 nm) negative tone electron-beam resist. The formation of the monolayer and the electron-induced crosslinking have been characterized by x-ray photoelectron spectroscopy. Nanometer size patterns were defined by electron-beam lithography in the molecular layer and transferred into silicon by wet chemical etching with potassium hydroxide. We demonstrate the fabrication of silicon line gratings with a resolution of similar to20 nm and of isolated silicon lines with linewidths down to similar to10 nm. (C) 2003 American Institute of Physics.
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