4.6 Article

Dynamically tuning properties of epitaxial colossal magnetoresistance thin films

Journal

APPLIED PHYSICS LETTERS
Volume 82, Issue 21, Pages 3725-3727

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.1578186

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The strain state of epitaxial La0.5Sr0.5MnO3 thin films on BaTiO3 are dynamically tuned by temperature and substrate bias. The resistivity of the La0.5Sr0.5MnO3 thin films is particularly sensitive to changes in structure. Fractional changes in magnetization and resistivity as a function of temperature reveal a direct correlation with fractional changes in the structure, as measured by out-of-plane x-ray diffraction. Fractional changes in resistivity, as large as 30%, are observed for strain induced by the structural phase transitions of the BaTiO3 substrate, and a 12% change is induced by an inverse piezoelectric effect at room temperature. (C) 2003 American Institute of Physics.

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