Journal
SOLID STATE COMMUNICATIONS
Volume 126, Issue 11, Pages 611-615Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(03)00304-1
Keywords
nanocrystalline materials; semiconductors; mechanical alloying; differential scanning calorimetry (DSC); X-ray diffraction (XRD); Raman spectroscopy
Categories
Ask authors/readers for more resources
Alloying of Ga with Se is observed in elemental Ga:Se = 50:50 mixture upon high-energy ball milling. X-ray diffraction of samples milled in the 1/2 < t < 3 h range displays evidence of hexagonal gallium selenide (GaSe). At longer milling times t > 10 h two wide bands are superimposed on the crystalline pattern, indicating that the main milling product at longer t is an amorphous phase. Differential scanning calorimetry shows that the amorphous phase is a Ga-Se phase and that it grows in concentration with t. Raman scattering provides modes of both amorphous and crystalline GaSe phases. (C) 2003 Elsevier Science Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available