Journal
JOURNAL OF APPLIED PHYSICS
Volume 93, Issue 11, Pages 8918-8925Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1571217
Keywords
-
Categories
Ask authors/readers for more resources
The mosaicity of GaN layers grown by metalorganic vapor phase epitaxy, on (0001) sapphire and exhibiting different grain diameters is studied using high-resolution x-ray diffraction. The coherence lengths, the tilt and the twist of the mosaic structure are determined utilizing data taken in different x-ray scattering geometries. The results of different models, which were applied, are then compared and discussed. The dislocation densities, obtained from the x-ray data, are compared with the results of plan-view transmission electron microscopy and atomic force microscopy. (C) 2003 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available