Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 50, Issue 6, Pages 1467-1474Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2003.813521
Keywords
crystallization; grain growth; polysilicon; thin-film transistor
Ask authors/readers for more resources
The growth mechanism of metal-induced-lateral-crystallization (MILC) was studied and modeled. Based on the time evolution of the metal impurity in the amorphous silicon film being crystallized, a model has been developed to predict the growth rate and the final metal distribution in the crystallized polysilicon. The model prediction has been compared with experimental results and high prediction accuracy is demonstrated. Using the model, the effects of annealing temperature, annealing time and initial metal concentration on the final grain size and metal impurity distribution can be analyzed. As a result, the model can be used to optimize the grain growth conditions for fabricating high performance thin-film-transistors on the recrystallized polysilicon film.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available