Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 50, Issue 3, Pages 483-499Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2003.812927
Keywords
CMOS; ionizing radiation; microelectronics; MOS; radiation effects
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This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.
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