InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth

The use of GaP and InP crystal decomposition for generating phosphorus molecular beam in MBE growth of multicomponent III-V alloys and multilayer heterostructures involving phosphorus is analysed. The operating characteristics of an InP decomposition phosphorus beam source are presented and MBE growth of InGaP and InGaAsP alloys with controlled composition in both sublattices is described. The usefulness of the source is further demonstrated by growing InGaP/InGaAsP short-period (8 nm) superlattices with high structural perfection as revealed by x-ray diffraction and transmission electron microscopy studies.