4.5 Article

Destructive single-event effects in semiconductor devices and ICs

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 50, Issue 3, Pages 603-621

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2003.813137

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Developments in the field of destructive single-event effects over the last 40 years are reviewed. Single-sevent latchup, single-event burnout, single-event gate rupture, and single-event snap-back are discussed beginning with the first observation of each effect, its phenomenology, and the development of present day understanding of the mechanisms involved.

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