Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 38, Issue 6, Pages 966-975Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2003.811977
Keywords
capacitive; CMOS; pressure sensor; smart textile
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This paper presents a mixed-signal system-on-chip (SOC) for sensing capacitance variations, enabling the creation of pressure-sensitive fabric. The chip is designed to sit in the corner of a smart fabric such as elastic foam overlaid with a matrix of conductive threads. When pressure is applied to the matrix, an image is created from measuring the differences in capacitance among the rows and columns of fibers patterned on the two opposite sides of the elastic substrate. The SOC approach provides the flexibility to accommodate for different fabric sizes and to perform image enhancement and on-chip data processing. The chip has been designed in a 0.35-mum five-metal one-poly CMOS process working up to 40 MHz at 3.3 V of power supply, in a fully reconfigurable arrangement of 128 I/O lines. The core area is 32 mm(2).
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