Journal
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume 51, Issue 6, Pages 1705-1711Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2003.812570
Keywords
cryogenic electronics; dc power; GaAs; InP high electron-mobility transistor (HEMT); low-noise amplifier (LNA); noise temperature
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This paper describes cryogenic broad-band amplifiers with very low power consumption and very low noise for the 4-8-GHz frequency range. At room temperature, the two-stage InP-based amplifier has a gain of 27 dB and a noise temperature of 31 K with a power consumption of 14.4 mW per stage, including bias circuitry. When cooled to 15 K, an input noise temperature of 1.4 K is obtained at 5.7 mW per stage. At 0.51 mW per stage, the input noise increases to 2.4 K. The noise measurements have been repeated at different laboratories using different methods and are found consistent.
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