Journal
APPLIED PHYSICS LETTERS
Volume 82, Issue 23, Pages 4092-4094Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1580631
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Electron-spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single-step tunneling is the dominant transport mechanism. The current - voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like LO phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses, indicating that tunneling enables significant spin injection from a metal into a semiconductor. (C) 2003 American Institute of Physics.
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