Journal
SURFACE SCIENCE
Volume 532, Issue -, Pages 1209-1218Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(03)00485-0
Keywords
scanning tunneling microscopy; molecular beam epitaxy; adsorption kinetics; surface diffusion; electrical transport (conductivity, resistivity, mobility, etc.); silicon; phosphine; solid gas interfaces
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The construction of a scalable quantum computer in silicon, using single phosphorus atoms as qubits, presents a significant technological challenge. This paper describes recent results from a 'bottom-up' strategy to incorporate individual phosphorus atoms in silicon with atomic precision using a combination of advanced scanning tunnelling lithography techniques followed by low temperature silicon molecular beam epitaxial overgrowth. To date we have demonstrated (i) placement of individual phosphorus molecules at predetermined sites in the silicon surface using a hydrogen resist strategy, (ii) spatially controlled phosphorus incorporation into the silicon surface, (iii) minimisation of surface segregation by low temperature silicon encapsulation and (iv) complete electrical activation of the donors. Whilst these results bode well for the fabrication of silicon devices with atomically precise dopant profiles, we discuss the challenges that remain before a few qubit P in Si quantum computer prototype can be realised. (C) 2003 Elsevier Science B.V. All rights reserved.
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