Journal
SCIENCE
Volume 300, Issue 5626, Pages 1726-1730Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1083894
Keywords
-
Categories
Ask authors/readers for more resources
The barrier height for electron exchange at a dielectric-semiconductor interface has long been interpreted in terms of Schottky's theory with modi. cations from gap states induced in the semiconductor by the bulk termination. Rather, we show with the structure specifics of heteroepitaxy that the electrostatic boundary conditions can be set in a distinct interface phase that acts as a Coulomb buffer. This Coulomb buffer is tunable and will functionalize the barrier-height concept itself.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available