In1-xMnxSb -: a narrow-gap ferromagnetic semiconductor

A narrow-gap ferromagnetic In1-xMnxSb semiconductor alloy was grown by low-temperature molecular-beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In1-xMnxSb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T-C ranging up to 8.5 K. The observed values of T-C agree well with the existing models of carrier-induced ferromagnetism. (C) 2003 American Institute of Physics.