Journal
APPLIED PHYSICS LETTERS
Volume 82, Issue 25, Pages 4576-4578Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1581389
Keywords
-
Categories
Ask authors/readers for more resources
The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we determine the field-effect mobility and the parasitic series resistance. The extracted parasitic resistance, typically in the MOmega range, depends on the applied gate voltage, and we find experimentally that the parasitic resistance decreases with increasing field-effect mobility. (C) 2003 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available