Journal
APPLIED PHYSICS LETTERS
Volume 82, Issue 25, Pages 4441-4443Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1585135
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We demonstrate ultraviolet emission from current-injection AlGaN multiple-quantum-well laser diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Lasing was obtained in gain-guided laser diode test structures with uncoated facets and cavity length ranging from 400 to 1500 mum. Under pulsed bias conditions, threshold current densities as low as 23 kA/cm(2) have been achieved for laser diodes with emission wavelengths between 359.7 and 361.6 nm. The maximum output power was 45 mW per facet with differential quantum efficiencies of 1.3%. (C) 2003 American Institute of Physics.
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