Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

Room-temperature continuous-wave operation of antimonide-based long wavelength VCSELs is demonstrated, with 1.2 mW power output at 1266 nm, the highest figure reported so far using this material system. Singlemode powers of 0.3 mW at 10degreesC and 0.1 mW at 70degreesC and sidemode suppression ratios up to 42 dB are also achieved.