Journal
PHYSICAL REVIEW B
Volume 67, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.67.241302
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Monte Carlo simulations shed light on the stress field and composition of C-induced Ge islands on Si(100). It is shown that the dots do not contain C, under any conditions of temperature and coverage, but have a gradual composition profile from SiGe at the bottom to Ge at the apex. The average compressive stress in the islands is considerably reduced compared to the pure Ge/Si case. At low Ge coverage, the top substrate layer around the dots is enriched with Si-C dimers. At high Ge contents, Ge wets the surface and covers the predeposited C geometries. We predict enhancement of Ge content in the islands upon C incorporation.
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