Journal
APPLIED PHYSICS LETTERS
Volume 82, Issue 26, Pages 4740-4742Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1586996
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Bipolar transistors with a ferromagnetic base are shown theoretically to have the potential to generate almost 100% spin-polarized current injection into nonmagnetic semiconductors. Optical control of ferromagnetism and spin splitting in the base can lead to either long-lived or ultrafast switching behavior. Fringe field control of the base magnetization could be used for information transfer between metallic magnetoelectronics and conventional semiconducting electronics. (C) 2003 American Institute of Physics.
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