Journal
APPLIED SURFACE SCIENCE
Volume 216, Issue 1-4, Pages 347-350Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0169-4332(03)00422-7
Keywords
hydrogen termination; deuterium; silicon; interface defect; hot-carrier-reliability
Ask authors/readers for more resources
We present the improvement of hot-carrier-reliability by deuterium annealing at the temperatures ranging from 430 to 460 degreesC in the case of CMOS transistors of the design rule of 0.13 mum. By means of secondary ion mass spectroscopy (SIMS) and ESR measurements, we confirm that this improvement is caused by the termination of the interface defects by deuterium atoms. (C) 2003 Elsevier Science B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
