Journal
OPTICAL MATERIALS
Volume 23, Issue 1-2, Pages 415-420Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/S0925-3467(02)00330-0
Keywords
SiC; crystal growth; semiconductor; defect
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This paper reviews the development of bulk SiC single crystals grown by physical vapor transport method, including the polytype control, defects and doped consideration. In addition, defects in commercial 6H-SiC wafer, such as micropipes, hexagonal voids and subgrain boundaries, are examined by transmission optical microscopy, X-ray synchrotron topography in back-reflection geometry and high-resolution X-ray diffraction methods. (C) 2003 Elsevier Science B.V. All rights reserved.
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