Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 650, Issue -, Pages 844-847Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2015.08.046
Keywords
Quaternary chalcogenides; Thermoelectric properties; Gallium doping
Categories
Funding
- National Science Foundation [DMR-1400957]
- II-VI Foundation Block-Gift Program
- assistant secretary for Energy Efficiency and Renewable Energy of the Department of Energy
- Propulsion Materials program under the Vehicle Technologies program
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1400957] Funding Source: National Science Foundation
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Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature transport properties. The resistivity, rho, and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S-2/rho) therefore increases with Ga-doping however the highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach for optimizing the thermoelectric properties of these materials and are part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for energy-related applications. (C) 2015 Elsevier B.V. All rights reserved.
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