Journal
SOLID STATE COMMUNICATIONS
Volume 127, Issue 5, Pages 355-359Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1098(03)00446-0
Keywords
semiconductors; epitaxy; alloys
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Novel chemical methods based on deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow SnxGe1-x alloys directly on silicon. Device-quality, strain-free films with a Sn-fraction as high as x = 0.2 were obtained. The optical properties provide evidence for a well-defined Ge-like band structure. In particular, the direct band gap EO is reduced to a value as low as 0.41 eV for Sn0.14Ge0.86. The growth of these high-optical quality infrared materials creates entirely new opportunities for band gap engineering on Si. (C) 2003 Elsevier Ltd. All rights reserved.
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