Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 32, Issue 7, Pages 672-676Publisher
MINERALS METALS MATERIALS SOC
DOI: 10.1007/s11664-003-0051-0
Keywords
HgCdTe; infrared detectors; uncooled detection; numerical simulations
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Uncooled, long-wavelength photovoltaic detectors suffer from poor quantum efficiency and low differential resistance. The problem can be solved by the use of stacked, multiple heterojunction-photovoltaic cells with thin absorber regions. We report here numerical simulation and optimization of the stacked, multiple Hg1-xCdxTe heterojunction cells used for detection of 10.6-mum infrared (IR) radiation operating as zero-bias photovoltaic devices or Auger-suppressed photodiodes. It is shown that the devices can be used as high-performance and fast-response detectors of long-wavelength radiation operating at ambient temperature with detectivities larger by more than one order of magnitude than that of the present practical devices.
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