4.7 Article

New Nd-doped lead zirconate Pb1-1.5xNdxZrO3 nanocrystals: Fabrication via wet chemical route for electrical and dielectric parameters evaluation

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 647, Issue -, Pages 693-698

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2015.06.096

Keywords

Lead zirconate nanocrystals; Co-precipitation; XRD; FTIR; Dielectric properties; I-V characteristics

Funding

  1. Higher Education Commission (HEC) of Pakistan [2913/RD/HEC]
  2. Indigenous Ph. D Fellowship [17-5(2Ps1-425)/HEC/Sch-Ind/2012]

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Pb1-1.5xNdxZrO3 nanocrystalline powder (x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) have been synthesized by co-precipitation technique. The prepared samples were annealed at temperature 700 degrees C for 3 h. The structural, dielectric and DC-electrical behavior of the Pb1-1.5xNdxZrO3 nanoparticles was evaluated using the X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, dielectric analysis and currente-voltage (I-V) characteristics. XRD analysis confirmed the formation of orthorhombic perovskite structure and the crystallite size estimated was 47.80-102.62 nm. The crystallite size and lattice parameters showed a nonlinear behavior. The FTIR spectra were recorded in the range 500-4000 cm(-1) that explained the intrinsic cation vibrations of the characteristic orthorhombic perovskite structure. The dielectric parameters were studied in the frequency range of 1 x 10(6) Hz to 3 x 10(9) Hz. In the dielectric parameters, a damping effect was observed by the substitutions of Pb with Nd ions in the higher frequency region. The dominating effect of doping on dielectric properties suggests that these nanomaterials are useful in the fabrication of high frequency and memory devices. DC-electrical measurements showed the increased resistivity as the Nd3+ content was increased. The minimum resistivity was observed for 2.3547 x 10(9) U-cm for PbZrO3 nanoparticles, while Pb0.925Nd0.05ZrO3 nanoparticles showed the maximum resistivity 1.2283 x 10(10) U-cm. This fivefold increase in DC-resistivity strongly supports the fabrication of high frequency devices. (C) 2015 Elsevier B.V. All rights reserved.

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