Direction-selective and length-tunable in-plane growth of carbon nanotubes

Chemical vapor deposition on selectively masked SiO2 patterns has been used to obtain controlled placement and exclusive in-plane growth of length- and direction-tunable carbon nanotubes (see Figure and inside cover). Nanotube bridges interconnecting SiO2 patterns are fabricated, and their electrical characteristics are demonstrated. This approach holds promise for manufacturing large-scale microelectronic systems integrated with nanotube-electrode units.