Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire

We have examined the nature of V-defects and inclusions embedded within these defects by atomic force microscopy (AFM) and high-resolution scanning electron microscopy (SEM)/ cathodoluminescence (CL) in InGaN/GaN multiple quantum wells (MQWs). To date, indium distribution nonuniformity in the well or GaN barrier growth temperature have been identified as the main factors responsible for the V-defect occurrence and propagation. Further complicating the matter, inclusions embedded within V-defects originating at the first InGaN-to-GaN interface have been observed under certain growth conditions. Our AFM and high-resolution SEM/CL findings provide evidence that some V-defects occur merely as direct results of barrier temperature growth, and that there are additional V-defects associated with In-rich regions, which act as sinks for further indium segregation during the MQW growth. Both types of V-defects have a tendency of promoting inclusions at low-temperature (800 degreesC) GaN barrier growth in an H-2-free environment. Localized strain-energy variations associated with the apex of V-defects may be responsible for the inclusion occurrence. Adding H-2 during the GaN barrier growth reduces V-defect formation and suppresses inclusion propagation entirely, rendering a uniform nanoscale CL signal. (C) 2003 American Institute of Physics.