Journal
APPLIED PHYSICS LETTERS
Volume 83, Issue 3, Pages 533-535Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1592639
Keywords
-
Categories
Ask authors/readers for more resources
We demonstrate that a forming gas annealing temperature of 520 degreesC significantly improves interface state passivation for SiO2/HfO2-based/polycrystalline-Si gate stacks as compared to annealing at 420 degreesC normally used for SiO2/polycrystalline-Si gate stacks. We also show that the initial interface state density is dependent upon the interfacial SiO2 preparation, whereby a chemically grown oxide has a higher initial interface state density as compared to a thermally grown oxide. (C) 2003 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available