Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 649, Issue -, Pages 216-221Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2015.07.150
Keywords
Indium oxide; Atomic layer deposition; Transparent conducting oxide; Resistivity
Categories
Funding
- UP Chemical
- Korea Sanhak Foundation
- Global Frontier R&D Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2013M3A6B1078870]
- National Research Foundation of Korea [2013M3A6B1078870] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Transparent conducting Indium oxide (InOx) thin films were deposited by atomic layer deposition at low deposition temperatures below 100 degrees C. For the comparative study with liquid precursors in low temperature thermal ALD, diethyl[1,1,1-trimethyl-N-(trimethylsilyl) silanaminato]-Indium, [3-(dimethylamino- kN) propyl-kC] dimethyl-Indium, and triethyl indium (TEIn) were used as the In precursors. Ozone was used as the oxidant for all precursors. InOx films grown using the three precursors all exhibit relatively low electrical resistivity below 10(-3) Omega cm at temperatures above 150 degrees C. Below 100 degrees C, the lowest resistivity (2 x 10(-3) Omega cm) was observed in the films grown with TEIn. The electrical, structural and optical properties were systematically investigated as functions of the deposition temperature and precursors. (C) 2015 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available