Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume 42, Issue 8, Pages 5295-5298Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.42.5295
Keywords
sputtering rate; Monte Carlo simulation; Cr thin film
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An attempt was made to calculate the sputtering rate of a cathode during a plasma-assisted deposition or etching process. In this attempt, an approach combining sputtering models and Monte Carlo simulation was developed. By using a Cr target as an example, the approach was shown to be satisfactory.
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