Journal
CHEMICAL PHYSICS LETTERS
Volume 377, Issue 1-2, Pages 223-228Publisher
ELSEVIER
DOI: 10.1016/S0009-2614(03)01098-4
Keywords
-
Ask authors/readers for more resources
Elemental Ge has been electrodeposited from 35 mM GeCl4 solution in 1-butyl-3-methyl imidazolium hexafluoro phosphate ([BMIm]PF6) on Si(1 1 1):H substrate at room temperature and studied by in situ electrochemical scanning tunneling microscopy (EC-STM) and scanning tunneling spectroscopy (STS). The initial stage of electrodeposition showed roughening of the surface with amorphous deposits all over the substrate. An ordered (2 x n) reconstruction was found to form in the 1-2 ML coverage regime. The remarkable observation, which is reported here for the first time is a metal-to-nonmetal transition as the thickness of the deposited Ge layer on Si(I I 1):H increased from 2 ML to about 3 nm. (C) 2003 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available