Journal
PHYSICAL REVIEW B
Volume 68, Issue 8, Pages -Publisher
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.68.081201
Keywords
-
Ask authors/readers for more resources
A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs- and InAs-based devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available