Journal
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 23, Issue 10, Pages 1593-1598Publisher
ELSEVIER SCI LTD
DOI: 10.1016/S0955-2219(02)00404-1
Keywords
annealing; films; resonator; sputtering; ZnO
Categories
Ask authors/readers for more resources
ZnO films were prepared on unheated silicon substrate by RF magnetron sputtering technique. Postdeposition annealing of ZnO films in vacuum were found to improve film structure and electrical characteristics, such as dense structure, smooth surface, stress relief and increasing resistivity. Suitable annealing temperature also reduced loss factor. The correlation between annealing conditions and the physical structure of the films (crystalline structure and microstructure) was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The preferred annealing condition has been found to improve ZnO film characteristics for piezoelectric applications. An over-mode acoustic resonator using the ZnO film after annealing at 400 degreesC in vacuum circumstance for 1 h showed a large return loss of 42 dB at the center frequency of 1.957 GHz. (C) 2003 Elsevier Science Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available