Journal
THIN SOLID FILMS
Volume 440, Issue 1-2, Pages 60-65Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/S0040-6090(03)00825-3
Keywords
dielectric properties; structural properties; laser ablation; deposition process
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CaCu3Ti4O12 (CCTO) thin films were successfully deposited on Pt/Ti/SiO2/Si(1 0 0) substrates using pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CCTO thin films were greatly affected by the substrate temperature and oxygen pressure. Thin films with a (2 2 0) preferential orientation were obtained at the substrate temperature above 700 degreesC and oxygen pressure above 13.3 Pa. The 480-nm thin films deposited under 720 degreesC and 26.6 Pa have a fairly high dielectric constant of near 2000 at 10 kHz and room temperature. The values of the dielectric constant and loss and their temperature-dependence under different frequency are comparable with those obtained in the epitaxial CCTO films grown on oxide substrates. (C) 2003 Elsevier Science B.V. All rights reserved.
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