Photoluminescence properties of SnO2 thin films grown by thermal CVD

The photoluminescence properties of SnO2 thin films grown by thermal chemical vapor deposition were investigated with different substrate temperatures. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks changed with increasing substrate temperature. It is concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects. (C) 2003 Elsevier Ltd. All rights reserved.