Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 18, Issue 5, Pages 1220-1229Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2003.816194
Keywords
IGBT; physics-based semiconductor device models; power diode; quasi-2-D semiconductor device models
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The problems faced in generating analytical models for the insulated gate bipolar transistor (IGBT) and power diode are devising correct equations and determining realistic boundary conditions, especially for two-dimensional (2-D) features, while ensuring convergence of the models. These issues are addressed in this paper in relation to the temperature dependent modeling of NPT IGBTs and diodes. Simulation and experimental results are presented and compared to validate the modeling approach.
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