Journal
IEEE ELECTRON DEVICE LETTERS
Volume 24, Issue 9, Pages 577-579Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2003.815939
Keywords
active-matrix arrays; amorphous silicon; jet printing; thin-film transistor (TFT)
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A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 x 64 pixel (300 mum pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of similar to3.5 V, carrier mobility of 0.7 cm(2)/V.s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10(8).
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