Interaction effects in conductivity of Si inversion layers at intermediate temperatures

We compare the temperature dependence of resistivity rho(T) of Si-metal-oxide-semiconductor field-effect transistors with the recent theory by Zala et al. In this comparison, the effective mass m(*) and g(*) factor for mobile electrons have been determined from independent measurements. An anomalous increase of rho with temperature, which has been considered as a signature of the metallic state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance rho(B-parallel to) is only qualitatively consistent with the theory; the lack of quantitative agreement indicates that the magnetoresistance is more sensitive to sample-specific effects than rho(T).